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BSC500N20NS3GATMA1 Images

BSC500N20NS3GATMA1 Images are for reference only, See Product Specifications

BSC500N20NS3GATMA1

Part Number BSC500N20NS3GATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 200V 24A TDSON-8
Data sheet BSC500N20NS3GATMA1.pdf
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Series OptiMOS™
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Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1580pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Rds On (Max) @ Id, Vgs 50 mOhm @ 22A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email [email protected] or Inquires online

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