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IPB180P04P4L02ATMA1 Images

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Part Number IPB180P04P4L02ATMA1
Manufacturer Infineon Technologies
Description MOSFET P-CH 40V 180A TO263-7
Data sheet IPB180P04P4L02ATMA1.pdf
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Series OptiMOS™
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Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.2V @ 410µA
Gate Charge (Qg) (Max) @ Vgs 286nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 18700pF @ 25V
Vgs (Max) ±16V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id, Vgs 2.4 mOhm @ 100A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email [email protected] or Inquires online

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